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irf6215s/l hexfet ? power mosfet pd - 91643 l advanced process technology l surface mount (irf6215s) l low-profile through-hole (IRF6215L) l 175c operating temperature l fast switching l p-channel l fully avalanche rated 5/13/98 s d g parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v ? -13 i d @ t c = 100c continuous drain current, v gs @ -10v ? -9.0 a i dm pulsed drain current ?? -44 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 310 mj i ar avalanche current ? -6.6 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ?? -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRF6215L) is available for low- profile applications. description v dss = -150v r ds(on) = 0.29 w i d = -13a 2 d pak to-262
irf6215s/l ? starting t j = 25c, l = 14mh r g = 25 w , i as = -6.6a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ** when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? i sd -6.6a, di/dt -620a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? uses irf6215 data and test conditions parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.6 v t j = 25c, i s = -6.6a, v gs = 0v ? t rr reverse recovery time CCC 160 240 ns t j = 25c, i f = -6.6a q rr reverse recovery charge CCC 1.2 1.7 c di/dt = -100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a s d g -11 -44 parameter min. typ. max. u nits conditions v (br)dss drain-to-source breakdown voltage -150 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.20 CCC v/c reference to 25c, i d = -1ma ? CCC CCC 0.29 v gs = -10v, i d = -6.6a ? CCC CCC 0.58 w v gs = -10v, i d = -6.6a ? t j = 150c v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 3.6 CCC CCC s v ds = -25v, i d = -6.6a ? CCC CCC -25 a v ds = 150v, v gs = 0v CCC CCC -250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = -20v gate-to-source reverse leakage CCC CCC -100 na v gs = 20v q g total gate charge CCC CCC 66 i d = -6.6a q gs gate-to-source charge CCC CCC 8.1 nc v ds = -120v q gd gate-to-drain ("miller") charge CCC CCC 35 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd = -75v t r rise time CCC 36 CCC i d = -6.6a t d(off) turn-off delay time CCC 53 CCC r g = 6.8 w t f fall time CCC 37 CCC r d = 12 w, see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 860 CCC v gs = 0v c oss output capacitance CCC 220 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 130 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss i dss drain-to-source leakage current l s internal source inductance 7.5 nh
irf6215s/l fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1 10 100 d ds 20s pulse w idth t = 25c c a -i , d rain-to-source c urrent (a) -v , drain-to-source voltage (v) vgs to p - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bot tom - 4.5v -4.5v 1 10 100 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse w idth t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source c urrent (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-s ource o n resistance ds(on) (n orm alized) a v = -10v gs i = -1 1a d t j = 25c t j = 175c
irf6215s/l fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 20406080 g gs a -v , gate-to-source voltage (v) q , total g ate char g e ( nc ) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d ds ds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 ope ration in this area limite d by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source volta g e ( v ) ds d 10s 100s 1ms t = 25c t = 175c sin g le pulse c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss t c = 25c
irf6215s/l 25 50 75 100 125 150 175 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf6215s/l fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as a startin g t , junction temperature ( c ) i top -2.7a -4.7a bo tto m -6.6a d
irf6215s/l peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets
irf6215s/l d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irf6215s/l package outline to-262 outline to-262 part marking information
irf6215s/l tape & reel information d 2 pak world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 5/98 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.42 9) 10.70 (.42 1) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.06 3) 1.50 (.05 9) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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